We present Raman scattering results of CdTe/ZnTe self assembled quantum dots (SAQD). Investigated samples were grown by molecular beam epitaxy on GaAs substrate. A CdTe buffer layer 4.5mm thick was deposited on the substrate. After a 1mm thick ZnTe layer, 3 monolayers (ml) of CdTe were deposited to form a random distribution of quantum dots. The dot layer was covered by 50 nm ZnTe capping layer.

Raman spectra were obtained in the backscattering geometry using lines of Ar-ion laser. Multiphonon (MP) resonant process can be described by the following equation: E_in-Kħw=E; E_in and E are the incident photon energy and electron transition energy, respectively. ħw is the phonon energy and K is the MP order. MP emission is not registered at T=300K. One-phonon spectrum shows weak intensity line at 201.6 cm^-1. MP emission processes are registered at temperature below T=200K (for 2.41eV laser energy, K=4). However, one-phonon spectrum consists of two lines. Besides mentioned line at 201.6 cm^-1 new line at 204.2 cm^-1 appears and takes part in resonance process. Resonance with line at 201.6 cm^-1 is not observed. At T=20K resonance order depend on excitation energy and its values are 2, 4, 5 and 7 for laser lines 2.41eV, 2.47eV, 2.49eV and 2.54eV, respectively. One phonon spectra is now more complicated. Besides mentioned, new lines are registered at 200.4, 210.3, 217 and 386 cm^-1.

We attribute the peak 204.2 cm^-1 to confined longitudinal-optical (LO) phonons from bulk ZnTe (209 cm^-1). Raman features at 210.3 and 200.4 cm^-1 are ascribed to the ZnTe LO modes confined by degenerate superlattices. We identified the peaks at 217 and 386 cm^-1 as ZnTe (TA+LO) modes and (LO+TO(Г)) modes, respectively. We connected mode at 201.6 cm^-1 with specific structure of ZnTe in the isolated islands of CdTe neighbourhood.