Structural properties of quaternary InAlGaN MQWs grown by plasma-assisted MBE

George P. Dimitrakopulos 2Philomela Komninou 2Thomas Kehagias 2Joseph Kioseoglou 2Alexandros Georgakilas 3Gerard Nouet 1Theodoros Karakostas 2

1. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
2. Dept. of Physics, Aristotle University of Thessaloniki, 54 124 Thessaloniki, Greece, Thessaloniki 54 124, Greece
3. Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas and University of Crete, Department of Physics, P.O. Box 1527, 71110 Heraklion, Crete, Greece, P.O. Box 1527, Heraklion 71110, Greece


Quaternary InxAlyGa1-x-yN multiple quantum wells (MQWs) with nominal composition x = 0.085, y = 0.285, and GaN spacers are characterized by high resolution transmission electron microscopy (HRTEM), geometric phase analysis (GPA), and energy dispersive x-ray nano-analysis in a scanning transmission electron microscope (STEM). The MQWs were grown by rf plasma MBE using metal-rich conditions and a relatively low growth temperature. Specimen preparation was performed by tripod polishing in order to minimize artifacts due to excessive ion milling. The material exhibits sharp well-defined interfaces. Indium clustering is not observed; the onset of clustering occurs only after prolonged observation under the electron beam. The GPA indicates that the quantum wells are lattice-matched to the GaN spacers. The chemical concentration profiles are obtained by de-convolution of EDX scans and confirm the chemical sharpness of the interfaces.

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Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by George P. Dimitrakopulos
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-30 13:09
Revised:   2009-06-07 00:44
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