dr Izabella Grzegory

e-mail:
fax: +48-22-6324218
web:
interest(s):

Affiliation:


Polish Academy of Sciences, Institute of High Pressure Physics

address: Sokolowska 29/37, Warszawa, 01-142, Poland
phone: +48-22-6324302
fax: +48-22-6324218
web: http://www.unipress.waw.pl

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Gallium nitride single crystals grown under high pressure for optoelectronics applications

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Growth anisotropy of GaN single crystals by high pressure and HVPE methods

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

Publications:


  1. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
  2. Bowing of epitaxial structures grown on bulk GaN substrates
  3. Built-in electric fields in group III-nitride light emitting quantum structures
  4. Gallium nitride single crystals grown under high pressure for optoelectronics applications
  5. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  6. Growth anisotropy of GaN single crystals by high pressure and HVPE methods
  7. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  8. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  9. Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
  10. Recognition of chemical (electrically active) non-homogeneities in thick HVPE-grown GaN layers
  11. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy



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