Gallium nitride single crystals grown under high pressure for optoelectronics applications
Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
The most important advantage of the growth of GaN from high temperature gallium solutions under high nitrogen pressure is that the crystals are almost free of dislocations (100 cm-2). The low density of dislocations is of crucial importance for the high power optoelectronic devices based on GaN and their ternaries. Therefore, the application of the pressure grown crystals as substrates for epitaxial deposition of blue-violet InGaN laser diode structure should give high quality devices. This will be shown by comparing of some physical properties of the quantum structures grown on both near defect free GaN and typical GaN/Al2O3 substrates containing high density of dislocations. Also the recent progress in the construction of high power blue and violet lasers on the pressure grown substrates achieved at the HPRC will be rewieved.
Presentation: invited plenary at E-MRS Fall Meeting 2003, Plenary session, by Izabella Grzegory
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-07-21 15:46 Revised: 2009-06-08 12:55