prof Zbigniew R. Zytkiewicz

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Affiliation:


Institute of Physics, Polish Academy of Sciences

address: , Warsaw, 02-668, Poland
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Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Novel substrates for heteroepitaxy by lateral overgrowth technology

Participant:


15th Summer School on Crystal Growth - ISSCG-15

began: 2013-08-04
ended: 2013-08-10
Presented:

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

Publications:


  1. Bulk GaAs growth by Contactless Liquid Phase Electroepitaxy
  2. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
  3. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
  4. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  5. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  6. Innowacyjne technologie wielofunkcyjnych materiałów i struktur dla nanoelektroniki, fotoniki, spintroniki i technik sensorowych (InTechFun).
  7. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  8. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  9. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
  10. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
  11. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
  12. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)
  13. Novel substrates for heteroepitaxy by lateral overgrowth technology
  14. Optimization of nitrogen plasma source parameters for growth of GaN by MBE
  15. Structure modifications in materials irradiated by ultra-short pulses of VUV free electron laser



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