Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates
|Andrian Kuchuk 1, Vasyl Kladko 1, Peter Lytvyn 1, Andriy Efremov 1, Hryhorii Stanchu 1, Aleksandra Wierzbicka 2, Marta Sobanska 2, Kamil Klosek 2, Zbigniew R. Zytkiewicz 2|
1. V. Lashkaryov Institute of Semiconductor Physics NASU (ISP), 41, pr. Nauki, Kiev 03028, Ukraine
GaN nanowires (NWs) are extensively studied due to their perfect structural characteristics in comparison with planar epitaxial layers. This allows creation of new electronic devices with improved parameters. In this work, the mechanism responsible for in-plane arrangement of self-induced GaN NWs grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111) substrate was investigated.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 10, by Aleksandra Wierzbicka
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-25 15:43 Revised: 2013-08-09 16:06