Novel substrates for heteroepitaxy by lateral overgrowth technology
|Zbigniew R. Zytkiewicz|
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Modern micro- and optoelectronic semiconductor devices consist of thin multilayers grown epitaxially on a substrate. These layers must be of high crystallographic quality. Otherwise, defects present in the structure deteriorate parameters of devices and lead to their fast degradation. Very often however, there are no suitable substrates for lattice-matched epitaxy and defects are generated at the epilayer/substrate interface. To prevent their propagation to the next-grown layers of the structure the lateral overgrowth technique has been elaborated. The breakthrough in development of long lifetime cw GaN/InGaN blue lasers, being due to high efficiency of defects filtration during lateral overgrowth, is the most spectacular recent achievement of the technique.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Zbigniew R. Zytkiewicz
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 18:26 Revised: 2009-06-08 12:55