Atomic Layer Deposition of Oxide Dielectric Films for Microelectronics
|Markku Leskela 1, Kaupo Kukli , Mikko Ritala|
1. Department of Chemistry, University of Helsinki, A. I. Virtasen aukio 1, Helsinki FIN-00014, Finland
The special features of atomic layer deposition (ALD): easy control of layer thickness also in ultra thin films and conformal coating with extreme aspect ratios can be utilized in microelectronics in MOSFET gate oxides and trench capacitors in DRAM technology, respectively. In both application dielectrics with permittivities greater than that of SiO2 are required to continue downward dimensional scaling of the devices. In gate dielectrics ZrO2 and HfO2 are the most often studied alternative materials whereas in DRAM capacitors very high k-materials or ferroelectrics like BST (barium strontium titanate) and SBT (strontium bismuth tantalate) are examined. In this presentation the deposition of these materials by ALD is described.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Markku Leskela
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-12 08:36 Revised: 2009-06-08 12:55