CVT contactless growth of ZnO crystals

Krzysztof Grasza ,  Andrzej Mycielski 

Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

Zinc oxide crystals were grown on the sapphire substrates in silica glass ampoules by Chemical Vapour Transport and Contactless Growth Method. The temperature field configuration and geometrical dimensions which were formerly applied to PVT contactless growth of other zinc and cadmium based II-VI compounds [1] and lead based IV-VI semiconductor compounds appeared to be appropriate for growth of ZnO by CVT. Hydrogen, bromine and chlorine were used as the transport agents, depending on the doping element (As, Cr, Cu) introduced to the crystal. Additional gases (N2, Ar) and additional Zn were used in order to improve the transport and growth conditions. It appears, that the best growth conditions are obtained in hydrogen atmosphere, keeping the Zn partial pressure close to pressure of hydrogen. Due to changes of the hydrogen pressure during growth, also the partial pressure of the zinc must be changed. Synchronization of these changes remains the main problem in our growth system.

[1] K.Grasza, W.Palosz, Crys.Res.Technol. 34(1999)565

 

Related papers
  1. (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te. 
  2. SEM studies of the etched surface of (Cd,Mn)Te
  3. The influence of the PVT growth conditions on the SiC crystal shape
  4. Optical Characterisation of Bulk ZnO Crystals Grown by CVT
  5. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  6. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  7. Far-infrared and Raman Spectroscopy of CdTe0.97Se0.03(In)
  8. Lattice dynamics and Raman spectroscopy of ZnO:Mn crystals
  9. Influence of hydrogen on hydrogenated cadmium telluride optical spectra
  10. Additional  Phonon Modes related to intrinsic defects in CdHgTe
  11. Phonon and vibrational spectra of real crystals obtained using the synchrotron radiation
  12. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
  13. Initial Stage of SiC Crystal Growth by PVT Method
  14. Preparation of the ZnO substrate surface
  15. Stability diagram for crystal growth from the vapor
  16. Magnetic properties of Fe doped SiC crystals
  17. Electrical contacts to semi-insulating (Cd,Mn)Te:V
  18. Influence of hydrogen on optical spectra of hydrogenated CdTe
  19. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  20. Structure properties of bulk ZnO crystals
  21. Materials requirements in the group - CdTe, CdZnTe and CdMnTe - and recent advances for X-ray and gamma-ray applications.
  22. Applications of the II-VI semimagnetic semiconductors
  23. Is the (Cd,Mn)Te crystal a prospective material for X-ray and γ-ray detectors?
  24. The local crystalline structure of ZnCdTe alloys obtained by Far Infrared Synchrotron Radiation measurements
  25. Defects induced by oxygen and hydrogen in CdTe crystals
  26. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  27. Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates
  28. Low-frequency magnons and phonons in hexagonal MnTe
  29. HIGH PRESSURE ANNEALING-INDUCED REDUCTION IN DEGREE OF COMPENSATION IN (Zn,Mn)Te CRYSTALS
  30. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study
  31. Differential Reflectivity and Photoemission study of ZnTe and CdTe(110) surface

Presentation: oral at E-MRS Fall Meeting 2004, Symposium F, by Krzysztof Grasza
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-28 09:16
Revised:   2009-06-08 12:55