Is the (Cd,Mn)Te crystal a prospective material for X-ray and γ-ray detectors?

Andrzej Mycielski 1Arnold Burger 2Małgorzata Sowińska 3Michael Groza 2P. Wojnar 1Andrzej J. Szadkowski 1Barbara Witkowska 1Wojciech Kaliszek 1Paul Siffert 4

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Fisk University, Department of Physics, Materials Science and Applications Group, 1000 17th Ave. N., Nashville, TN 37208-305, United States
3. EURORAD C.T.T., 23, Rue du Loess - BP 20, Strasbourg F-67037, France
4. European Materials Research Society - Headquarters, 23, Rue du Loess - BP 20, Strasbourg F-67037, France

Abstract

To answer the title question - the technology and properties of the (Cd,Mn)Te crystals will be discussed as compared with those of the more commonly used (Cd,Zn)Te crystals.
The composition homogeneity of the large single crystals of the ternary compound seems to be easier to achieve in the case of (Cd,Mn)Te because the segregation coefficient of Mn in CdTe is negligible whith respect to that (approx. 1.4) of Zn
Only 15% of MnTe has to be added to CdTe to reach the best for the detector application value of the energy gap (in the range 1.7 - 2.2 eV), while the necessary amount of ZnTe is over 30%! This is because the composition dependence of the CdTe energy gap is for Mn twice as strong as for Zn. Using a smaller amount of the second cation diminishes many alloying-related problems.
Dopant-free as grown (Cd,Mn)Te crystals are of p-type, which is related to the Cd vacancies acting as acceptors. The number of vacancies can be reduced by the post-growth annealing in the Cd vapours and the high (~ 1010 Ωcm ) resistivity, required for good detectors, can be obtained by doping with donors.
The technology of the (Cd,Mn)Te crystals, undoped and compensated in the very large range of concentrations, and Cd-annealing of the samples will be discussed. Characterization of the obtained crystals by the measurements of resistivity, photoluminescence and photoconductivity will be described. The behaviour of the preliminary detectors will be shown.

Related papers
  1. Influence of hydrogen on hydrogenated cadmium telluride optical spectra
  2. Additional  Phonon Modes related to intrinsic defects in CdHgTe
  3. Phonon and vibrational spectra of real crystals obtained using the synchrotron radiation
  4. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
  5. Preparation of the ZnO substrate surface
  6. Recent initiatives to create a materials community in Europe
  7. Electrical contacts to semi-insulating (Cd,Mn)Te:V
  8. Influence of hydrogen on optical spectra of hydrogenated CdTe
  9. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  10. Structure properties of bulk ZnO crystals
  11. Material properties limiting the use of cadmium zinc telluride X- and gamma detectors
  12. Materials requirements in the group - CdTe, CdZnTe and CdMnTe - and recent advances for X-ray and gamma-ray applications.
  13. Applications of the II-VI semimagnetic semiconductors
  14. Security control by an innovative X-ray method
  15. Gamma spectroscopy with room temperature semiconductor detectors and scintillation probes operating without PMT
  16. Applying advanced solid-state radiation detector technologies for public protection
  17. Development of portable CdZnTe spectrometers for remote sensing of signatures from nuclear materials
  18. Neutron Detection with Cryogenics and Semiconductors
  19. The local crystalline structure of ZnCdTe alloys obtained by Far Infrared Synchrotron Radiation measurements
  20. Defects induced by oxygen and hydrogen in CdTe crystals
  21. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  22. Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates
  23. Low-frequency magnons and phonons in hexagonal MnTe
  24. HIGH PRESSURE ANNEALING-INDUCED REDUCTION IN DEGREE OF COMPENSATION IN (Zn,Mn)Te CRYSTALS
  25. Laser stimulated p-n junction formation in CdTe
  26. CVT contactless growth of ZnO crystals
  27. High-temperature behavior of CdTe<Cl> crystals
  28. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study
  29. Differential Reflectivity and Photoemission study of ZnTe and CdTe(110) surface

Presentation: invited oral at NATO Advanced Research Workshop, by Andrzej Mycielski
See On-line Journal of NATO Advanced Research Workshop

Submitted: 2004-08-12 16:41
Revised:   2004-08-18 14:52
Google
 
Web science24.com
© 1998-2008 pielaszek research, all rights reserved Powered by the Conference Engine