Magnetic properties of Fe doped SiC crystals

Izabela Kuryliszyn-Kudelska 1R. Diduszko 2Emil Tymicki 2Witold Dobrowolski 1Krzysztof Grasza 1,2

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Warszawa 01919, Poland


Recently, ferromagnetic semiconductors have attracted much interest due to potential applications in spin-based information-processing technologies. SiC is a good candidate for spintronic investigations because of its wide bandgap (3.0 eV for 6H polytype) and due to potential technological applications. Recently, magnetic properties of Fe- implanted SiC were investigated [1]. In the present studies SiC crystals were grown by Physical Vapor Transport method. We used Fe enriched source material to dope crystals. The growth temperature was equal to 21500C. DC magnetization measurements performed at low temperatures and low magnetic fields revealed ferromagnetic type of magnetic ordering. In the low magnetic field magnetization data the hysteresis loops are present. The structural investigation using powder XRD were performed. The presence of nonmagnetic FeSi precipitates ([2]) was observed. We will present the systematic magnetic measurements including AC susceptibility and DC magnetization up to 9T in the range of low and high temperatures as well as structural studies using powder XRD. The chemical analysis using SIMS will be performed. The origin of ferromagnetic behaviour will be discussed.

[1] N. Theodoropoulou et al., Electrochemical and Solid-State Letters, 4 (12) G119-G121 (2001)

[2] V. Jaccarino et al., Phys. Rev. 160, 476, (1967)

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Izabela Kuryliszyn-Kudelska
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-25 11:57
Revised:   2009-06-07 00:44
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