The role of Ge predeposition temperature in the epitaxy of SiC on Silicon

F. M. Morales 2Ch. Zgheib 1,3S. I. Molina 2D. Araújo 2R. García 2C. Fernández 4A. Sanz-Hervás 5P. Masri 3P. Weih 1Th. Stauden 1V. Cimalla 1Oliver Ambacher 1J. Pezoldt 1

1. Technische Universität Ilmenau, Zentrum für Micro- and Nanotechnologien, Ilmenau 98693, Germany
2. Universidad de Cádiz, Dpto de Ciencia de los Materiales e IM y QI, 11510 Puerto Real, Cádiz, Spain
3. Groupe d'Etude des Semiconducteurs, CNRS-UMR 5650, Universite de Montpellier 2, 12 Place Eugene Bataillon, Montpellier 24095, France
4. Universidad de Cádiz, Dpto. de Química Física, 11510 Puerto Real, Cádiz, Spain
5. Dpto. de Tecnología Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid. 28040 Madrid, Spain, Madrid, Spain


Silicon carbide on silicon is a promising heteroepitaxial system for the integration of wide band gap semiconductors into silicon technology. The main problem for the fabrication of devices based on that heteroepitaxial system is its large lattice and thermal expansion mismatch. In this work we present an alternative method for stress relaxation in the SiC/Si heteropitaxial system based on a theoretical approach, which consists in the incorporation of a group IV element into the interface between SiC and Si. According to this, 1 ML germanium was predeposited on the silicon surface at different substrate temperatures prior to the carbonization of the Si substrate by molecular beam epitaxy. After the carbonization, a 120 nm-thick 3C-SiC layer was grown by solid source epitaxy. The resulting structures were investigated by transmission electron microscopy (TEM), x-ray diffraction, secondary ion mass spectroscopy (SIMS) and Fourier transform infrared spectroscopy (FTIR). TEM and SIMS results revealed a strong segregation of Ge at the interface leading to an increased stress relaxation and improved crystalline quality, in agreement with theoretical predictions. The improved crystalline quality of the grown 3C-SiC layer is shown by a decreased lattice distortion and smaller damping constants of the TO phonon. Furthermore, the incorporation of Ge at the interface suppresses the outdiffusion of Si from the substrate to the surface of the growing SiC layer and, therefore, impedes the formation of voids at the SiC/Si interface.

Related papers
  1. Study of Si doped AlGaN by synchrotron radiation x-ray microprobe techniques
  2. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
  3. AlGaN/GaN based optical and electrical sensors
  4. Alignment of SiC quantum dots on silicon substrates
  5. 3C-SiC:Ge alloys grown on Si (111) substrates by solid source MBE
  6. Kinetic Monte Carlo simulation of SiC nucleation on Si(111)
  7. Studies on sub-band gap absorption in AlGaN photoconductors and solar-blind photodetectors

Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by F. M. Morales
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-16 17:13
Revised:   2009-06-08 12:55
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine