Kinetic Monte Carlo simulation of SiC nucleation on Si(111)
|A. A. Schmidt 2, Yu. V. Trushin 2, P. Weih 1, Oliver Ambacher 1, J. Pezoldt 1, V. Cimalla 1|
1. Technische Universität Ilmenau, Zentrum für Micro- and Nanotechnologien, Ilmenau 98693, Germany
Nanosized SiC-Si heterostructures offers applications as tunnelling barriers and anti-dot structures with their specific applications in nano- and optoelectronics. Solid source mo-lecular beam epitaxy is an effective technique for the formation and the investigation of the growth laws. The easiest way to form nanosized SiC nuclei with well defined distribution and forms is the interaction of carbon with silicon surfaces. The large lattice mismatch between the SiC and Si forces three dimensional nucleation. The nuclei distribution can be designed by using proper substrate temperature, carbon fluxes and process times . Nevertheless, up to now the very early stages of the carbon silicon interaction are not well understood. To have an deeper insight into the early nucleation stages the kinetic Monte Carlo method was applied. The following basic physical processes were included in the model: deposition of carbon atoms, diffusion, attachment to and detachment from the clusters, creation of the SiC nuclei on top of the existing two-dimensional clusters. The scaling of the simulated cluster size distribution is shown (fig. 1). The simulations allowed to estimate the range of the surface diffusion activation energy for the carbon atoms on silicon and predicts the cluster concentration and cluster size distribution of SiC on Si. In the present work in situ reflection high-energy electron diffraction and atomic force microscopy was used to compare the theoretical predictions with the growth experiments.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by J. Pezoldt
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-17 10:36 Revised: 2009-06-08 12:55