Kinetic Monte Carlo simulation of SiC nucleation on Si(111)

A. A. Schmidt 2Yu. V. Trushin 2P. Weih 1Oliver Ambacher 1J. Pezoldt 1V. Cimalla 1

1. Technische Universität Ilmenau, Zentrum für Micro- and Nanotechnologien, Ilmenau 98693, Germany
2. Physico-Technical Institute, Politekhnicheskaya 26, Saint-Petersburg 194021, Russian Federation


Nanosized SiC-Si heterostructures offers applications as tunnelling barriers and anti-dot structures with their specific applications in nano- and optoelectronics. Solid source mo-lecular beam epitaxy is an effective technique for the formation and the investigation of the growth laws. The easiest way to form nanosized SiC nuclei with well defined distribution and forms is the interaction of carbon with silicon surfaces. The large lattice mismatch between the SiC and Si forces three dimensional nucleation. The nuclei distribution can be designed by using proper substrate temperature, carbon fluxes and process times [1]. Nevertheless, up to now the very early stages of the carbon silicon interaction are not well understood. To have an deeper insight into the early nucleation stages the kinetic Monte Carlo method was applied. The following basic physical processes were included in the model: deposition of carbon atoms, diffusion, attachment to and detachment from the clusters, creation of the SiC nuclei on top of the existing two-dimensional clusters. The scaling of the simulated cluster size distribution is shown (fig. 1). The simulations allowed to estimate the range of the surface diffusion activation energy for the carbon atoms on silicon and predicts the cluster concentration and cluster size distribution of SiC on Si. In the present work in situ reflection high-energy electron diffraction and atomic force microscopy was used to compare the theoretical predictions with the growth experiments.

[1] F. Scharmann, P. Maslarski, Th. Stauden, W. Attenberger, J.K.N. Lindner, B. Stritzker, J

Related papers
  1. Study of Si doped AlGaN by synchrotron radiation x-ray microprobe techniques
  2. Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
  3. AlGaN/GaN based optical and electrical sensors
  4. Alignment of SiC quantum dots on silicon substrates
  5. 3C-SiC:Ge alloys grown on Si (111) substrates by solid source MBE
  6. The role of Ge predeposition temperature in the epitaxy of SiC on Silicon
  7. Studies on sub-band gap absorption in AlGaN photoconductors and solar-blind photodetectors

Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by J. Pezoldt
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-17 10:36
Revised:   2009-06-08 12:55
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine