3C-SiC:Ge alloys grown on Si (111) substrates by solid source MBE

P. Weih 1V. Cimalla 1Th. Stauden 1R. Kosiba 1L. Spiess 1H. Romanus 1M. Gubisch 1W. Bock 2Th. Freitag 3P. Fricke 3Oliver Ambacher 1J. Pezoldt 1

1. Technische Universität Ilmenau, Zentrum für Micro- and Nanotechnologien, Ilmenau 98693, Germany
2. Universitdt Kaiserslautern, Institut fur Oberfldchen und Schichtanalytik, Kaiserslautern D-67663, Germany
3. 3ISIMS-Labor, Institut Fresenius, Zur Wetterwarte 10, Haus 107, Dresden 01109, Germany


One disadvantage of SiC for applications in electronic devices is the relative low carrier mo-bility. The creation of SiC:Ge alloys provide the opportunity to improve the electronic prop-erties in comparison to SiC epitaxial layers. The disadvantage of this system is the relatively low thermodynamical stability and the immiscibility of Ge in SiC. As a consequence nonequilibrium material synthesis methods must be applied to achieve 3C-SiC:Ge alloys. In this work for the first time a comprehensive research of SiC:Ge thin films grown on Si (111) substrates by solid source molecular beam epitaxy (SSMBE) will be presented. The layers were grown at substrate temperatures ranging from 1173 K to 1313 K with a growth rate of 0.6 nm/min. The 120 nm thick layers were characterized by x-ray diffraction (XRD), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). The structural analysis revealed that 3C-SiC:Ge alloys were grown. SIMS and AES measurements detected a Ge content of around 1 % and a significant Ge segregation at the SiC/Si interface (Fig.1). The dependence of Ge incorporation on growth temperature as well as on the strain in the SiC:Ge alloys will be discussed.

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by J. Pezoldt
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-17 10:27
Revised:   2009-06-08 12:55
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