Sergei Dvoretsky

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Affiliation:


Institute of Semiconductor Physics (ISP)

address: pr. Lavrentieva 13, Novosibirsk, 630090, Russian Federation
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Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

MBE growth of HgCdTe layers and their properties in the context of IR applications

Publications:


  1. Changes in 8-12 mm CdHgТe photodiode arrays caused by fast neutron radiation
  2. Linear 288×4 long wavelength infrared mercury cadmium telluride detector
  3. Matrix 320×256 infrared long wavelength detector with inner short wavelength cut-off filter
  4. MBE growth of HgCdTe layers and their properties in the context of IR applications
  5. Properties of MBE CdxHg1-xTe/GaAs structures modified by ion-beam milling



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