MBE growth of HgCdTe layers and their properties in the context of IR applications
Institute of semiconductor physics (ISP), Lavrentiev, Novosibirsk, Russian Federation
Today molecular beam epitaxy (MBE) is the modern powerful epitaxial technique for growth of HgCdTe layers and complex heterostructures growth for routine and perspective infrared detectors (IRD's). At present time there are the essential successes in developing and production of MBE equipment, investigations of growth process, mechanisms of detects formation, studying of external doping. There are reported the numerical architectures of IRD's (including unique FPA's of 2042*2042 elements format and multicolor detectors) which fabricated on the basis of HgCdTe layers grown on different substrates (CdZnTe, GaAs, Si ect.) by MBE and operated in wide wavelength range.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium C, by Sergei Dvoretsky
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-13 09:34 Revised: 2009-06-08 12:55