Today molecular beam epitaxy (MBE) is the modern powerful epitaxial technique for growth of HgCdTe layers and complex heterostructures growth for routine and perspective infrared detectors (IRD's). At present time there are the essential successes in developing and production of MBE equipment, investigations of growth process, mechanisms of detects formation, studying of external doping. There are reported the numerical architectures of IRD's (including unique FPA's of 2042*2042 elements format and multicolor detectors) which fabricated on the basis of HgCdTe layers grown on different substrates (CdZnTe, GaAs, Si ect.) by MBE and operated in wide wavelength range.
We present the ogiginal development and production of unique MBE equipment including ultra fast ellipsometer for controlled industrially oriented technology of HgCdTe heterostructures on 4 inches in diameter substrates. The detailed investigations of growth processes and defects formation of buffer CdZnTe layer on GaAs substrate and HgCdTe on CdZnTe/GaAs substrates allow to found the optimal growth condition and substrate orientation for production high quality undoped large areas uniform material basically for IR photoconductors and photodiodes. As-grown HdCdTe layers are low carrier concentration (1014 cm-3) n-type conductivity. P-type conductivity HgCdTe layers are fabricated by thermal annealing of as-grown materials in inert atmosphere. There are constructed HgCdTe layers with gradient layers at the interface and at the surface to improve material properties for IRD. We demonstrate high quality modern photovoltaic IRD's of 1x574 and 4x288 elements (λc=11.0 = 12.0 μm at 77K), which fabricated on the basis of HgCdTe/CdZnTe/GaAs heterostructures. The thermal image of 576x768 elements format on the basis of developed FPA's were done.