Conductivities and waveguide properties of ZnO films and multilayer structures
|Armen R. Poghosyan 1, Ruben K. Hovsepyan , Eduard S. Vardanyan , Vahe G. Lazaryan|
1. Institute for Physical Research (IPR), IPR-2, Ashtarak-2 378410, Armenia
A sol-gel and electron-beam deposition methods were used to obtain ZnO:X films doped with different elements (X=Al, Ga and Li). The developed technique allows to obtain both high-conductive transparent and dielectric doped ZnO films.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Armen R. Poghosyan
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-21 10:30 Revised: 2009-06-08 12:55