A sol-gel and electron-beam deposition methods were used to obtain ZnO:X films doped with different elements (X=Al, Ga and Li). The developed technique allows to obtain both high-conductive transparent and dielectric doped ZnO films.
Influence of Li, Ga and Al impurities of various concentrations on electric and photoelectric properties of zinc oxide films has been investigated. The developed technique allows to obtain as high-conductive and dielectric films. Measurements of film conductivity were carried out in a wide frequency range (0-10¹⁰ Hz). The value of resistivity depends on impurity and changes from 10^-4 up to 10⁶ Ωcm.
Photoelectric properties studies have shown that at Li doping it is possible to achieve essential increase of photoconductivity. This phenomenon can be used for development of solid-state photodetectors for UV range (290-340 nm).
Planar and channel waveguides were developed on the basis of ZnO films and multilayer structures with various impurity. About twenty waveguides were created on one substrate (thickness 0.5-1 μm, width 20 μm, length 25-30 mm, turning radius 2 mm).

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