Structured oxide films preparation by sol-gel method
|Armen R. Poghosyan , Ira A. Ghambaryan , Stepan G. Grigoryan , Albert G. Hayrapetyan , Aleksandr L. Manukyan|
Institute for Physical Research (IPR), IPR-2, Ashtarak-2 378410, Armenia
The integrated optical elements prepared on ferroelectric thin films (in particular, lithium niobate films) are the most promising for optoelectronics applications. A key stage in production of the integrated optics devices is forming of microtopography on crystalline films. The current methods generally comprise two separate steps: producing of thin film and creation a topographical pattern on it. But use of these traditional methods to form the patterned lithium niobate films is very complicated due to difficulties of lithium niobate etching by mask.
Here we present new approach based on the development of the modified sol-gel technology. In this case, the photolithography is used on the stage of dried gel whereupon the direct crystallization of patterned precursor film allows to obtain structured oxide single crystal thin film without subsequent etching of crystalline film.
The precursor (dried gel) thin film patterns were prepared by two new related methods: from photosensitive sol-gel solution and by etching precursor film using photoresist. We have developed appropriate photosensitive precursors (amorphous film of the metal complex) for patterned lithium niobate film preparation and studied photosensitive characteristics of gel, film exposition and etching parameters. Unlike crystalline lithium niobate, the precursor films are easily etched. When grown on a sapphire substrate and properly annealed, the patterned precursor material becomes structured single crystal thin film with high aspect ratio topographic features. The developed method of preparation of structured oxide thin films could be the basis for future integrated optical devices.
Presentation: Poster at E-MRS Fall Meeting 2008, Symposium B, by Armen R. Poghosyan
See On-line Journal of E-MRS Fall Meeting 2008
Submitted: 2008-05-16 19:32 Revised: 2009-06-07 00:48