Characteristics of the interface dependent silicide formation for Gd on Si substrate

Kwun-Bum Chung 1,2Y. K. Choi 1M. H. Jang 1SeongJun Kang 1H. J. Kim 1M. Noh 1C. N. Whang 1

1. Yonsei University (Yonsei UNIV.), Sinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea, South
2. Atomic-scale Surface Science Research Center (ASSRC), Sinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea, South

Abstract

Silicides are widely used in silicon integrated circuits as contact and interconnection. The metal-Si interface is of fundamental interest in Si-based semiconductor research and technology. Among the various silicides, rare-earth(RE) silicides have attracted interests because of their low Schottky barrier heights on n-type silicon(0.3~0.4eV). During post annealing, the solid-state reaction between epitaxially grown Gd film and Si substrate typically result in pitted rough surface. These pits increase sheet resistance and enhance leakage current such that they are detrimental to the electronic properties of diodes using Gd-silicide. Therefore, understanding and controlling of the silicide formation in Gd on Si system are important issue. We report our result of investigation on Gd-silicide formation for the samples with Gd layer deposited on Si substrates, where each Si surface was treated differently.

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Kwun-Bum Chung
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-10 04:54
Revised:   2009-06-08 12:55
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