Study of GdSi2-x formation in the presence of an interfacial SiO2 layer

Kwun-Bum Chung 1,2Y. K. Choi 1M. H. Jang 1SeongJun Kang 1D. S. Park 1M. Noh 1C. N. Whang 1

1. Yonsei University (Yonsei UNIV.), Sinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea, South
2. Atomic-scale Surface Science Research Center (ASSRC), Sinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea, South

Abstract

Gadolinium silicide films were grown in ultrahigh vacuum(UHV) on a Si(111) substrate through an interfacial SiO2 layer. In order to examine the role of an interfacial SiO2 layer during the silicide formation, we used in-situ reflection of high energy electron diffraction, x-ray diffraction, x-ray photoelectron spectroscopy, and high resolution transmission electron microscopy. The structural transformation was observed from the initial GdSi1.7 hexagonal phase to GdSi2 orthorombic phase as the post-annealing temperature increase. Our experimental results implied that an interfacial SiO2 layer decomposed and the reaction between Gd and Si was enhanced. We conclude that the competitive reaction among Gd, Si, and its oxides determine the reaction pathway in gadolinium silicide formation.

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium B, by Kwun-Bum Chung
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-10 04:47
Revised:   2009-06-08 12:55
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