A set of equations of stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals
|Alexander K. Fedotov 2, Oleg I. Velichko 1, Vladimir A. Dobrushkin 3|
1. Belarusian State University of Informatics and Radioelectronics (BSUIR), P.Brovka str. 6, Minsk 220000, Belarus
The principal trend in modern electronics is decrease in the dimensions of semiconductor devices and usage of diverse multilayer structures to achieve the required parameters of devices. It means that interfaces exert a significant effect on the evolution of dopant-defect system and hence on the electrophysical parameters of advanced electronic devices. This influence has a multifactor character, but changes in defect generation and annihilation due to elastic stresses in the vicinity of interface comes into particular prominence.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Alexander K. Fedotov
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-04-30 16:43 Revised: 2009-06-08 12:55