Impedance, magnetoimpedance and magnetization of CoFeZr nanoclusters embedded into alumina matrix

Alexander K. Fedotov 2Saad Anis 3I. A. Svito 2Julia A. Fedotova 2Bogdan V. Andrievsky 1Yury E. Kalinin 5Alexy A. Patryn 1Vera V. Fedotova 4Victoria Malyutina-Bronskaya 2Alexander V. Mazanik 2Alexander V. Sitnikov 5Maria I. Tarasik 2

1. Technical University of Koszalin, Raclawicka 15-17, Koszalin, Poland
2. Belarusian State University (BSU), F. Skaryna av. 4, Minsk 220050, Belarus
3. 2Al-Balqa Applied University, Salt, Jordan
4. The Institute of Solid State & Semiconductor Physics, Belarus NAS (ISSSP), P. Brovka, Minsk 220072, Belarus
5. Voronezh State Technical University, Voronezh, Russian Federation


The 3 to 5 mcm thick films with the fraction x of CoFeZr alloy between 30 and 65 at.% in alumina matrix were sputtered on single substrate from the compound target in the chamber evacuated either with pure Ar or Ar-O gas mixture.

It was also revealed by Mössbauer spectroscopy and magnetization measurements that phase composition and magnetic state of metallic component strongly depends on gas mixture in the sputtering chamber: metallic nanoclusters in the samples sputtered in pure Ar displayed magnetic properties whereas at sputtering in Ar-O gas mixture they were superparamagnetic. We connect this difference with the influence of oxide precipitates formed on metallic nanoparticles due to the presence of oxygen in gas mixture in the sputtering chamber.

Real part of impedance versus temperature R(T) exhibited exponential laws characteristic for hopping mechanisms. It was also exhibited negative sign of R(B) with squared-like magnetic field dependence that can be ascribed to tunneling of carriers by localized states in alumina between metallic nanoparicles. For the samples with the metallic alloy concentration 40 at.% < x < 55 at.% R does not depend significantly on frequency f in the temperature range where it shows activational temperature dependences (as for DC resistance). For the samples with x < 40 at.% the R(f) ~ f in -s extent with s ~ 2 for temperatures less than 120 K and activational temperature dependences only for f < 400 kHz. For the samples over the percolative threshold (x > 55 at.%) the R(f) ~ f in -s extent dependence is disturbed although exponential character of impedance is remained.

Related papers
  1. Structure and optical properties of screen-printed CdS-CdSe films
  2. Magnetic properties of nanogranular composites CoFeZr -Alumina
  3. Influence of reactive gases on the properties of CoFeZr-Alumina nanocomposites
  4. Quantum-chemical simulation of electrically active complexes at silicon grain boundaries
  5. Structure and electrical properties of the film CoFeZr-aluminium oxide nanocomposites
  7. Structure and electric properties of nanocrystalline CdS-CdSe films sputtered on substrates with silver sublayer
  8. A set of equations of stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals
  9. Simulation of oxygen-contained complexes in silicon-silicon interface in cluster approximation

Presentation: oral at E-MRS Fall Meeting 2005, Symposium D, by Alexander K. Fedotov
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-16 17:14
Revised:   2009-06-07 00:44
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine