Recombination processes with and without momentum conservation in degenerate InN
|Evgenia Valcheva 3, S. Alexandrova 1, S. Dimitrov 3, H. Lu 2, William J. Schaff 2|
1. Institute of Solid State Physics, Bulgarian Academy of Sciences (ISSP-BAS), 72, Tzarigradsko Chaussee blvd., Sofia 1784, Bulgaria
The evaluation of InN fundamental properties and parameters like band gap, effective mass values, phonon modes, etc., of both poly- and monocrystalline InN layers is a subject of permanently growing number of reports. Photoluminescence experiments are widely used to investigate the nature of the recombination processes. Applied to high concentration material the experiment is usually used for the determination of the effective optical band-gap assuming band filling and renormalization effects.
Presentation: oral at E-MRS Fall Meeting 2005, Symposium A, by Evgenia Valcheva
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-30 13:27 Revised: 2009-06-07 00:44