Czochralski Growth of Indium Iodide
|Aleksandar G. Ostrogorsky 1, Irina Nicoara 1, Dimitru Nicoara 1, Zhaopeng Xu 1, Charles Bertorrello 1, Michael Groza 2, Arnold Burger 2|
1. Illinois Institute of Technology, 10 West 33rd Street, Chicago, Il 60616, United States
There has been only a small number of reported attempts to use the Czochralski process for growing the wide bandgap compound semiconductors, needed for the room temperature operated nuclear detectors. The main difficulty is in the low chemical stability and high vapor pressure of the group II, V, VI and VII elements, leading to the off-stoichiometric composition, and various related defects. Among the heavy metal halides, indium mono-iodide presents an interesting exception. InI has a high disassociation energy and low relatively low vapor pressure, allowing for Czochralski pulling. We will describe the procedures used for synthesis, zone refining, Czochralski growth and characterization of indium iodide.
Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 4, by Aleksandar G. Ostrogorsky
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-04-16 14:27 Revised: 2013-04-16 14:31