- Marta Sobanska

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Affiliation:


Polish Academy of Sciences, Institute of Physics

address: , Warszawa, 02-668, Poland
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Participant:


15th Summer School on Crystal Growth - ISSCG-15

began: 2013-08-04
ended: 2013-08-10
Presented:

15th Summer School on Crystal Growth - ISSCG-15

Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE

Publications:


  1. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
  2. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  3. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  4. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
  5. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
  6. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
  7. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)
  8. Optimization of nitrogen plasma source parameters for growth of GaN by MBE



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