Czeslaw Skierbiszewski

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Affiliation:


Polish Academy of Sciences, Institute of High Pressure Physics

address: Sokolowska 29/37, Warszawa, 01-142, Poland
phone: +48-22-6324302
fax: +48-22-6324218
web: http://www.unipress.waw.pl

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Low temperature plasma assisted MBE growth for nitride optoelectronic devices

Participant:


E-MRS Fall Meeting 2007

began: 2007-09-17
ended: 2007-11-30
Presented:

E-MRS Fall Meeting 2007

Blue laser diodes by low temperature plasma assisted MBE

Participant:


Euro MBE 2009

began: 2009-03-08
ended: 2009-03-11
Presented:

Publications:


  1. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
  2. Blue laser diodes by low temperature plasma assisted MBE
  3. Far field pattern of AlGaN cladding free blue laser diodes grown by PAMBE
  4. Indium incorporation mechanism during InGaN growth by plasma-assisted molecular beam epitaxy
  5. Low temperature plasma assisted MBE growth for nitride optoelectronic devices
  6. Semipolar (2021) UV LEDs and LDs grown by PAMBE
  7. Semipolar and nonpolar AlGaN growth mechanisms under N-rich conditions in PAMBE
  8. TEM investigation of processed  InGaN based laser grown by PAMBE on bulk GaN substrate
  9. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy



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