- Piotr Caban

e-mail:
fax: +48-22-8645496
web:
interest(s):

Affiliation:


Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Growth of high resistivity GaN layers by compensating defects generation

Publications:


  1. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  2. Growth of high resistivity GaN layers by compensating defects generation
  3. Modeling of heat and mass transfer in GaN MOVPE reactor
  4. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  5. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates



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