Krystyna Golaszewska

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Affiliation:


Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Study of Long-Term Stability of Ohmic Contacts to GaN

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Comparison of various GaSb-based device structures for application in thermophotovoltaic cells

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Photothermal investigations of SiC thermal properties

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers

Publications:


  1. Characterization of Ir and IrO2 Schottky contacts on n-type 4H-SiC under high temperature stress
  2. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  3. Determination of stress in composite engineered substrates for GaN-based RF power devices
  4. Diffusion barrier properties of reactively sputtered W-Ti-N thin films
  5. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  6. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
  7. NANOCOMPOSITE PHOTONIC SENSORS: FIRST APPROACH BY THE NANOPHOS INITIATIVE
  8. Optimisation of electrochemical sulphur treatment of GaSb and related semiconductors: application to surface passivation of GaSb/In(Al)GaAsSb TPV cells
  9. Photothermal investigations of SiC thermal properties
  10. p-type conducting ZnO: fabrication and characterisation
  11. Study of Long-Term Stability of Ohmic Contacts to GaN
  12. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  13. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  14. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells



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