Krystyna Golaszewska

Affiliation:

Institute of Electron Technology

Participant:

E-MRS Fall Meeting 2003

Participant:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Publications:

1. Characterization of Ir and IrO₂ Schottky contacts on n-type 4H-SiC under high temperature stress
2. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
3. Determination of stress in composite engineered substrates for GaN-based RF power devices
4. Diffusion barrier properties of reactively sputtered W-Ti-N thin films
5. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
6. NANOCOMPOSITE PHOTONIC SENSORS: FIRST APPROACH BY THE NANOPHOS INITIATIVE
7. Optimisation of electrochemical sulphur treatment of GaSb and related semiconductors: application to surface passivation of GaSb/In(Al)GaAsSb TPV cells
8. Photothermal investigations of SiC thermal properties
9. p-type conducting ZnO: fabrication and characterisation
10. Study of Long-Term Stability of Ohmic Contacts to GaN
11. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
12. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
13. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells