dr Jolanta Borysiuk

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Affiliation:


Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations

Publications:


  1. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  2. Growth of high resistivity GaN layers by compensating defects generation
  3. Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes
  4. Raman spectroscopy of single and multilayer graphene on SiC substrates
  5. Structure and magnetic properties of carbon encapsulated Fe nanoparticles obtained by arc plasma synthesis
  6. Study of synthesis and formation mechanisms of nanometric magnesium alumina spinel powders



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