dr Aleksandra Wierzbicka

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Affiliation:


Instytut Fizyki PAN

address: Al. Lotnikow 32/46, Warszawa, 02668, Poland
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Participant:


IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

began: 2011-09-26
ended: 2011-09-27
Presented:

IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 

IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 

Publications:


  1. Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
  2. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  3. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
  4. Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
  5. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
  6. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  7. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  8. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  9. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
  10. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
  11. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)



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