dr Saulius Miasojedovas

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Affiliation:


Institute of Material Science and Applied Research

address: Sauletekio 9, III bld., Vilnius, LT-10222, Lithuania
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Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Stimulated emission in InGaN/GaN structures with different quantum well width

Participant:


E-MRS Fall Meeting 2007

began: 2007-09-17
ended: 2007-11-30
Presented:

E-MRS Fall Meeting 2007

Carrier recombination under one-photon and two-photon excitation in GaN epilayers

Publications:


  1. Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
  2. Carrier recombination under one-photon and two-photon excitation in GaN epilayers
  3. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  4. Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
  5. Stimulated emission in InGaN/GaN structures with different quantum well width



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