A J. Nikitin

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Affiliation:


Institute of Semiconductor Physics SB RAS

address: Lavrentjeva 13, Novosibirsk, 630090, Russian Federation
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Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

E-MRS Fall Meeting 2005

Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy


Publications:


  1. Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy




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