Saulius Jursenas

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interest(s):

Affiliation:


Institute of Materials Science and Applied research

address: Sauletekio al. 9, Vilnius, 2040, Lithuania
phone: +3705366059
fax: +3705366059
web: http://www.mtmi.vu.lt/index.html

Affiliation:


Vilnius University, Institute of Materials Science and Applied Research

address: Sauletekio 9, building III, Vilnius, LT-2040, Lithuania
phone: +370 5 2366059
fax: +370 5 2366059
web:

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Impact of post-growt thermal annealing on emission of InGaN/GaN multiple quantum wells

E-MRS Fall Meeting 2003

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

Publications:


  1. Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
  2. Carrier recombination under one-photon and two-photon excitation in GaN epilayers
  3. Impact of post-growt thermal annealing on emission of InGaN/GaN multiple quantum wells
  4. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  5. Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
  6. Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
  7. Stimulated emission in InGaN/GaN structures with different quantum well width



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