prof William A. Doolittle

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Affiliation:


Georgia Institute of Technology

address: 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
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Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

E-MRS Fall Meeting 2005

Indium Nitride: A Material with Photovoltaic Promise and Challenges


Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN

Publications:


  1. Growth Methodologies for Overcoming the Perceived Limitations of Phase Separation and p-type Doping in InGaN
  2. Indium Nitride: A Material with Photovoltaic Promise and Challenges




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