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D. Bouchier

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Affiliation:


Institut d'Electronique Fondamentale, UMR-CNRS 8622, 91405 Orsay Cedex, France

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Publications:


  1. Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO2 from (001) and (111) Si nano-areas
  2. Selective epitaxial growth of Ge/Si quantum dots on patterned Si(001) substrate by ultra high vacuum chemical vapor deposition



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