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Eliana Kaminska

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Affiliation:


Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Publications:


  1. Characterization of Ir and IrO2 Schottky contacts on n-type 4H-SiC under high temperature stress
  2. Diffusion barrier properties of reactively sputtered W-Ti-N thin films
  3. Fabrication of GaSb microlenses by photo and e-beam lithography and dry etching
  4. NANOCOMPOSITE PHOTONIC SENSORS: FIRST APPROACH BY THE NANOPHOS INITIATIVE
  5. Optical and magnetooptical properties of the p-type ZnMnO.
  6. Optical properties of p-type ZnO:(N, As, Sb)
  7. Passivation of GaN surface by chemical bath deposition of thin CdS layers
  8. Preparation and characterization of hexagonal MnTe and ZnO layers
  9. Study of Long-Term Stability of Ohmic Contacts to GaN
  10. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  11. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells



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