Nanotechnology methods for wide forbidden zone semiconductors (boron, carbon, their compounds) preparation.

P Kervalishivili 

Abstract

The one of the main goals of nanotechnology is to take the building blocks such as atoms, molecules or their clusters, understanding their properties and build new materials - films, layers and ingots, new tools and devices.
The high-temperature semiconductors with the wide forbidden zone are one of the most preferable materials for modern nano technology-based electronics. Among them the main role can play the very interesting and important materials based on boron and carbon as well as their compounds. These complicate substances with unique structural properties and difficult technology for their film's preparation are promising because of their electric and physical properties as well as mechanical hardness and chemical resistance. According to several research works carbon and boron crystals are building of clusters, the essential structural elements containing 4, 12, 60, and 84 atoms. These nanoelements due to necessary thermodynamic conditions are transforming to amorphous or crystalline films, layers and other deposits, which can have some advanced properties.
Following to classical ideas of particles formation and growth and in correspondence with the so-called atomistic process of conception, atoms being the germs of the solid phase unite in aggregates (molecules, clusters) with atoms quantity depending on atoms potentials. Using the established or last years-new approach to the mechanism of cluster's formation it is easy to show that during the formation of small particles the appearance of small particles analogous to so-called fractal clusters very often takes place. Such volume clusters consisting of separate clusters of lesser dimensions have much more low density than the matrix substance. Formation of semiconductor materials using the clusters based growing mechanisms actually is carried out by experimental methods, among which it should be noted: supersonic outflow of vapors into vacuum, thermo-, laser- and plas

 

Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by P Kervalishivili
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-28 12:54
Revised:   2009-06-08 12:55