Microstructure of Fe3O4 film grown on Si(100) substrate, investigated by TEM and X-ray methods

Mirosław Kozłowski 3M. Bari 1C. De Nardi 1Ryszard Diduszko 2,3Piotr Dłużewski 2A. Szczepańska 2

1. Trinity College, Deptartment of Physics, College Green, Dublin Dublin 2, Ireland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Industrial Institute of Electronics (PIE), Dluga, Warszawa 00-241, Poland

Abstract

Epitaxial growth of metal oxide films on semiconducting substrates plays an important role in microelectronic monolithic integrated circuits. Different techniques like MBE, laser ablation, chemical vapour deposition and sputtering are used for production of the layers. The main difficulties arise from lattice mismatch and chemical reactions between semiconductor substrate and oxide layer. This has been observed for Fe3O4 film deposited by laser ablation on Si substrate.
Microstructure of Fe3O4 film deposited on (100) oriented Si substrate by sputtering was investigated by TEM and X-ray methods. Fe3O4 film was polycrystalline with preferential orientation of (111) planes parallel to Si substrate, but without preferential in plane direction. An amorphous 3-4 nm thick layer was observed between the substrate and Fe3O4 film. Occurrence of crystallites, oriented in the same manner like substrate suggest, that even in presence of an amorphous layer, the pseudoepitaxial growth of Fe3O4 film is possible.

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Mirosław Kozłowski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 17:04
Revised:   2009-06-08 12:55
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