Fabrication and characterization of SiC/Si heterojunction diode.
|Taupin Héloise 1, Philippe MARIE 1, Laurent PICHON 2, Richard RIZK 1|
1. Laboratoire d'Eudes et de Recherches sur les MATériaux (LERMAT), bd Maréchal Juin, Caen 14050, France
Thin silicon carbide films have been obtained by reactive magnetron sputtering at varius temperatures under hydrogen rich plasma. Infrared absorption spectroscopy measurements reveal a crystalline fraction that increases from about 40% to 80% when the deposition temperature is increased from 300 to 600C. X-ray diffraction measurements show evidence of SiC nanocrystals embedded in an amorphous matrix. Moreover, preliminary dark conductivity measurements show a transport property behavior that appears quite compatible with the evolution of the structural features. Finally, SiC/Si heterojunctions based on Sb-doped SiC layers were fabricated and characterized, showing a relatively high rectification behavior together with a low leakage current.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Taupin Héloise
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 16:58 Revised: 2009-06-08 12:55
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