Radiative tunneling of electrons and holes localized on randomly distributed donors and acceptors is one of the dominant recombination mechanism in many semiconductors, including new laser and optoelectronic materials such as ZnSe [1] and GaN [2]. Recently, Morel et. al. introduced pseudo-donor-acceptor pairs model for the description of recombination processes in InGaN/GaN quantum wells [3]. In this case electrons and holes are localized due to potential fluctuations at interfaces and not on donors and acceptors. It was shown that summing all possible configurations of such localized carriers explains nonexponential decay of luminescence, quite similarly to what is observed for bulk system. However, the tunneling probability in former case is in the form of Gaussian function of the electron-hole distance and not exponential like in the latter.
In this communication we show, that both in bulk or low dimensional system kinetics of such processes can be calculated exactly and next we discuss how this observation simplifies analysis of experimental results.

This research was supported by grant no. 5 P03B 007 20 of KBN for 2001-2003 years

[1]. P. Baume, S. Strauf, J. Gutowski, M. Behringer, D. Hommel, J. Cryst. Growth 184/185, 531 (1998)
[2]. S. Strauf, S. M. Ulrich, P. Michler, J. Gutowski, T. Bottcher, S. Figge, S. Einfeldt D. Hommel, phys. stat. sol. (b) , 238, 379 (2001)
[3]. A. Morel, P. Lefebvre, T. Taliercio, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies, Physica E17, 64 (2003)

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1. Application of interval analysis for determination of the parameters of the Schottky contacts
2. Modelling of quantum wells with smooth boundaries