Kinetics of the donor-acceptor and "pseudo-donor-acceptor" pairs in nitrides
|Adam J. Zakrzewski|
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Radiative tunneling of electrons and holes localized on randomly distributed donors and acceptors is one of the dominant recombination mechanism in many semiconductors, including new laser and optoelectronic materials such as ZnSe  and GaN . Recently, Morel et. al. introduced pseudo-donor-acceptor pairs model for the description of recombination processes in InGaN/GaN quantum wells . In this case electrons and holes are localized due to potential fluctuations at interfaces and not on donors and acceptors. It was shown that summing all possible configurations of such localized carriers explains nonexponential decay of luminescence, quite similarly to what is observed for bulk system. However, the tunneling probability in former case is in the form of Gaussian function of the electron-hole distance and not exponential like in the latter.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Adam J. Zakrzewski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 15:38 Revised: 2009-06-08 12:55