Optical, EPR and RBS studies in Tm implanted ZnO samples
|Teresa Monteiro 1, M. J. Soares 1, A. Neves 1, M. Oliveira 1, E. Rita 2, U. Wahl 2, E. Alves 2|
1. University of Aveiro, Campus de Santiago, Aveiro 3810-193, Portugal
Due to its potential applications for electroluminescent devices the doping of wide band-gap materials, such as GaN and ZnO, with rare earth (RE) ions is actually an interesting field of study. Trivalent RE ions like Eu3+, Er3+ and Tm3+ are known to be suitable dopants for red, green, and blue emitters, respectively. Moreover Er3+ and Tm3+ emissions in the middle infrared have promising applications as fiber amplifiers and optical switches in optical fiber communication technology.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Manuel J. Soares
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 13:33 Revised: 2009-06-08 12:55