The interaction of Pr2O3 with 4H-SiC(0001) surfaces

Andriy Goryachko ,  Ioanna Paloumpa ,  Guido Beuckert ,  Karsten Henkel ,  Patrick Hoffmann ,  Dieter Schmeißer ,  Yevgen Burkov 

Brandenburg Technical University, Department of Applied Physics/Sensorics (BTU), Erich Weinert Str. 1, Cottbus 03044, Germany

Abstract

We prepare thin films (<3nm) of Pr2O3 films on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO3)4. We use surfaces covered by a native oxide and such with the oxide being removed by HF dip. We determine the roughness of these films by AFM studies and their chemical composition by XPS measurements. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the core levels in more detail. We report on the thickness dependent variations in the O1s core level and determine the relative abundance of graphitic carbon in the interface regime from the C1s emission. The Si2p core level emission is analysed in detail and reveals that a silicate is formed at the interface and the thickness of that interfacial layer is determined. Our data are compared to corresponding studies of the Pr2O3 interaction with Si(100) surfaces /1,2/.

/1/ H.J.Osten, J.P.Liu, H.J.Muessig, Appl.Phys.Lett. 80 (2002) 297.
/2/ D. Schmeisser, Comp.Materials Science, in press.

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  1. XPS and AFM investigations of buffer layer between Si(100) and 3C-SiC, created by interaction with C2H2

Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Andriy Goryachko
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 20:36
Revised:   2009-06-08 12:55
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