The "ITRS Roadmap" suggests the necessity of working out the processing methods allowing formation of ultrathin dielectric layers with higher than for silicon dioxide dielectric permittivity value. The silicon oxynitride layers (SiO_xN_y) seem to be the most natural compromise. But still none of high temperature methods used for its formation can be seriously considered as final solution for future ULSI-CMOS ICs production due to the inevitable formation of nitride monolayers just at the silicon-insulator interface. The main scope of this investigation is to check if this is true.
The oxynitride layers were produced by PECVD method. The process has already been optimised in order to allow repeatable and reliable formation of ultrathin layers (<10 nm). These layers were investigated by photoelectron spectroscopy (PES) using variable excitation energy. This results in a variable escape depth of the photoelectrons from were the depth structure of the sample can be concluded. Due to the combination of chemical information and depth information this method is a unique tool for investigating the hidden nitride layers. In this work we present a comparing study of oxynitride layers with different oxygen-to-nitrogen ratios and different post-deposition annealing temperatures investigated by the above described method.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/867 must be provided.

1. Si-oxide and Si-oxynitride interfaces analysed by ultra-low energy SIMS