Energy transfer to Er3+ ions in silicon-rich-silicon-oxide: efficiency lamitations.

Dmitry Kuritsyn 2A Kozanecki 2H. Przybylinska 2W Jantsch 1

1. Institut für Halbleiterphysik Universität Linz, Altenberger Str. 69, Linz A-4040, Austria
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


A detailed investigation of the excitation mechanisms of the 4I13/2-4I15/2 intra-4f-shell luminescence of Er3+ ions near 1.5 μm in silicon-rich silicon oxide (SRSO) is reported. SRSO:Er was produced by high dose implantation of Si+ ions into SiO2 layers grown on silicon, followed by Er+ implantation at an energy of 800 keV. Samples were thermally annealed up to 1100oC to create different types of defects and Si-nanocrystals (nc-Si). Photoluminescence excitation (PLE) spectra were obtained using optical parametric oscillator (OPO) and Ti:Sapphire laser in the range 420-680 and 720-830 nm, respectively.
The results show that in SRSO:Er two mechanisms of excitation are in competition: a resonant one and via defects. The resonant channel of excitation of Er3+ 4f-shell which gives a maximum luminescence yield for Er doped silica without additional Si is suppressed by the silicon excess related defects; resonant peaks disappear with increasing of annealing temperature of SRSO. We suggest that the dominant factors, which limit the excitation efficiency of Er3+ in SRSO, are distance dependence of the transfer rate and little spectral overlap of the interacting states. Employing density of states function for nc-Si, Er3+ absorption function and spectral overlap integral, the quantitative estimation of overall efficiency of the system nc-Si:Er3+ for multipole interaction between localized in nc-Si (or nc-Si/SiO2 interface) e-h pairs and 4f-states of Er3+ is presented. The dependence of the Er3+ emission on excitation duration were also studied. For one electron-hole pair being generated by excitation pulse we show that one nc-Si can excite only one or less of Er3+ ions in its vicinity.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Dmitry Kuritsyn
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 17:01
Revised:   2009-06-08 12:55