Studies of symmetry of erbium centers in GaN.
|Vasyl Glukhanyuk , A Kozanecki , H. Przybylinska|
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Er-doped semiconductors are promising materials for optoelectronic devices operating on the intra 4f-shell transitions of the rare earth impurity. GaN:Er is currently studied very intensively, because of its importance for modern optoelectronics. In spite of many efforts little is known, however, about Er energy structure, as generally Er creates complexes with another dopants, mainly with oxygen, which makes analysis difficult. To omit this Er should be introduced into substrates with low oxygen content and by ion implantation.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Vasyl Glukhanyuk
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 16:57 Revised: 2009-06-08 12:55