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Electrical characterisation of magnetoresistive sensors based on AMR and GMR effects used for lab-on-a-chip applications

Marius Volmer 1Marioara Avram 2

1. Transilvania University, Physics Department, Eroilor 29, Brasov 2200, Romania
2. National Institute for Research and development in Microtechnologies (IMT-Buchares), P.O.Box 38-160, Bucharest 023573, Romania

Abstract

The magnetoresistive sensors made from Permalloy (Ni80Fe20) thin films and Permalloy based multilayered structures are very attractive for detection of low magnetic fields in lab-on-a-chip applications. We exploit the anisotropic magnetoresistance effect (AMR), which appears in these structures, to build a microcompass for detection of the position and rotation rate of a micro rotor used to study the dynamics of the biological fluids. For this reason, we used the planar Hall effect (PHE) to get direct access to the anisotropic part of the resistance with the advantage of a reduced thermal drift of the output signal. The multilayer structure presents, in addition to the AMR effect, the giant magnetoresistance effect. The samples have circular shape geometry with approximately 5 mm in diameter. The four-lead setup consists of 4 Cu strips forming a square of 4 mm each side. We used a computer controlled measurement system. Because of the contacts misalignment the angular behaviour of the PHE voltage is distorted. To compensate these errors and to increase the sensor sensitivity we used a special setup in which we made, sequentially, two measurements of the PHE for each angle over two orthogonal directions. Also, we performed micromagnetic simulations to discuss the effect of the magnetic field strength on the shape of the angular dependence of PHE. To make these simulations we used complex structures of Permalloy single domains which interact between them and with the applied magnetic field. From experimental measurements and micromagnetic simulations, made on the multilayered structure, results a distortion of the angular dependence of the PHE for low magnetic fields (less than 200 Oe) because the magnetization vector can not follow the direction of the applied magnetic field.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium A, by Marius Volmer
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-31 17:12
Revised:   2009-06-07 00:44