GISAXS study of hydrogen implanted silicon
|Branko Pivac 1, Pavo Dubcek 1, Sigrid Bernstorff 2, Federico Corni 3, Rita Tonini 3|
1. RUDJER BOSKOVIĆ INSTITUTE, BIJENIČKA C. 54, Zagreb 10 000, Croatia
The grazing incidence small angle X-ray scattering (SAXS) technique was used to study monocrystalline silicon samples implanted with H2 ions at energy of 32 keV and to the dose of 1E16 ions/cm2. Samples were annealed isochronally at different temperatures in the range from 100 to 900 C.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Branko Pivac
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-25 16:27 Revised: 2009-06-08 12:55