Ferromagnetic oxide heteroestructures for spin filtering

Josep Fontcuberta 1Ulrike Lüders 1,5Martin Gajeck 1,2Agnes Barthélémy 2Manuel Bibes 3Karim Bouzehouane 2Stéphane Fusil 4Eric Jacquet 2Jean-Pierre Contour 2Jean-Francois Bobo 5Albert Fert 2

1. Institut de Ciencia de Materials (ICMAB) - CSIC (ICMAB), Campus de la UAB, Barcelona 080193, Spain
2. Unité Mixte de Physique CNRS-Thales, Domaine de Corbeville, Orsay 91404, France
3. Institut Electronique Fondamentale, Université Paris-Sud, Orsay 91405, France
4. Université d'Evry, Rue du Pere Jarlan, Evry 91025, France
5. Lab. de Nanomagnetisme pour Hyperfréquence, CNRS-ONERA, 2 avenue Edouard Belin, Toulouse 31055, France


The need of spin-polarized current sources has fuelled the research on half-metallic ferromagnetic oxides during the last decade. Indeed, development on spintronics mainly relies on the availability of sources of spin-polarized carriers that could be ultimately injected into semiconductors of other functional structures. Unfortunately, so far, the half-metallic character of the celebrated manganites can not be exploited in room-applications as the magnetoresistance of magnetic tunnel junctions or related devices decays rapidly with temperature and becomes unpractical. Therefore, efforts have to be directed to development of alternative spin-polarized sources. In this presentation we shall overview our recent developments in this direction. We will illustrate that heterostructures involving thin ferromagnetic oxides tunnel barriers can be successfully used to spin-filter a paramagnetic charge current. We will discus results, and promises of these devices as candidates as key building blocks of magnetoelectric devices.


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Presentation: Invited oral at E-MRS Fall Meeting 2006, Symposium K, by Josep Fontcuberta
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-29 09:50
Revised:   2009-06-07 00:44