Self-passivation mechanisms of N clusters in SiC
|Riccardo Rurali 1,2, Eduardo Hernández 2, Philippe Godignon 1, José Rebollo 1, Pablo Ordejón 2|
1. Centre Nacional de Microelectrónica (CNM) - CSIC, Barcelona 08193, Spain
Nitrogen (N) is one of the most interesting n-type dopant for wide band-gap semiconductors (diamond, silicon carbide) due to its low mass and to the easy way with which it can be chemically manipulated.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Riccardo Rurali
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-23 14:46 Revised: 2009-06-08 12:55