Growth, Fe incorporation, and properties of GaN:Fe and (Ga,Fe)N:Mg
Institut für Halbleiter und Feskörperphysik, Johannes Kepler Universität (FKP-JKU), Altenbergerstr. 69, Linz 4040, Austria
It has become clear over the recent couple of years that a progress in the development of functional diluted ferromagnetic semiconductors requires the determination of growth phase diagrams for particular hosts and for particular magnetic dopants, including a quantitative information on the substitutional vs. interstitial incorporation of the magnetic ions as well as on spinodal decomposition and on precipitation of different crystallographic phases . In this talk, I will review our recent work on the growth  and characterization  of the GaN:Fe and (Ga,Fe)N:Mg materials systems with special attention at the incorporation of the transition metal ions into the hexagonal GaN matrix. All our GaN:Fe and (Ga,Fe)N:Mg samples have been grown by means of metalorganic chemical vapor deposition on c-sapphire substrates and thoroughly characterized via high-resolution x-ray diffraction, transmission electron microscopy , secondary-ion mass spectroscopy, photoluminescence, spectroscopic ellipsometry , Hall-effect, electron-spin resonance , SQUID magnetometry  and extended X-ray absorption fine structure . These studies provide information on the solubility limit and on the charge state of Fe in GaN substitutional sites for various growth conditions, and elucidate the relation between the character of Fe incorporation and magnetic, optical and transport properties of this model materials system.
Presentation: Invited oral at E-MRS Fall Meeting 2006, Symposium E, by Alberta Bonanni
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-19 21:22 Revised: 2009-06-07 00:44